Dynamics of light-induced FeB pair dissociation in crystalline silicon
The dynamics of light-induced dissociation of iron–boron (FeB) pairs in p-type crystalline silicon is investigated. The dissociation is observed to be a single-exponential process which is balanced with thermal repairing. The dissociation rate is proportional to the square of the carrier generation rate and the inverse square of the FeB concentration. This suggests that the dissociation process involves two recombination or electron capture events. A proportionality constant of 5×10⁻¹⁵s...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Geerligs_Dynamics_of_light-induced_FeB_2004.pdf||360.01 kB||Adobe PDF|
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