Implantation-induced electrical isolation of GaAsN epilayers grown by metalorganic chemical vapor deposition
The electrical isolation of p-type GaAs₁ˍₓNₓ epilayers (x=0.6%, 1.4%, and 2.3%) produced by H, Li, C, or O ion implantation and its thermal stability in nominally undoped GaAs₀.₉₈₆N₀.₀₁₄ epilayers were investigated. Results show that the sheet resistance of p-type GaAsN layers can be increased by about five or six orders of magnitude by ion implantation and the threshold fluence (Fth) to convert a conductive layer to a highly resistive one depends on the original free carrier concentration and...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Gao_Implantation-induced_2003.pdf||485.54 kB||Adobe PDF|
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