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Implantation-induced electrical isolation of GaAsN epilayers grown by metalorganic chemical vapor deposition

Gao, Q.; Deenapanray, P. N. K.; Jagadish, C.; Tan, Hark Hoe


The electrical isolation of p-type GaAs₁ˍₓNₓ epilayers (x=0.6%, 1.4%, and 2.3%) produced by H, Li, C, or O ion implantation and its thermal stability in nominally undoped GaAs₀.₉₈₆N₀.₀₁₄ epilayers were investigated. Results show that the sheet resistance of p-type GaAsN layers can be increased by about five or six orders of magnitude by ion implantation and the threshold fluence (Fth) to convert a conductive layer to a highly resistive one depends on the original free carrier concentration and...[Show more]

CollectionsANU Research Publications
Date published: 2003-10-20
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.1621089


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