Gettering of Pd to implantation-induced nanocavities in Si
The gettering of Pd to nanocavities in Si for implantation doses ranging from 5×10¹³ to 1×10¹⁵ cm¯² and annealing temperatures ranging from 750 to 1050 °C was investigated using Rutherford backscattering and cross-sectional transmission electron microscopy. For a given annealing temperature, the gettering efficiency increased as the dose decreased. For a given dose, maximum gettering efficiency was achieved at the intermediate temperatures studied. Competition between silicide formation and...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Brett_Gettering_of_Pd_to_2003.pdf||387.9 kB||Adobe PDF|
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