Lattice damage produced in GaN by swift heavy ions
Wurtzite GaN epilayers bombarded at 300 K with 200 MeV ¹⁹⁷Au¹⁶⁺ ions are studied by a combination of transmission electron microscopy(TEM) and Rutherford backscattering/channeling spectrometry (RBS/C). Results reveal the formation of near-continuous tracks propagating throughout the entire ∼1.5-μm-thick GaN film. These tracks, ∼100 Å in diameter, exhibit a large degree of structural disordering but do not appear to be amorphous. Throughout the bombarded epilayer, high-resolution TEM reveals...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Kucheyev_Lattice_damage_produced_in_GaN_2004.pdf||697.78 kB||Adobe PDF|
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