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Lattice damage produced in GaN by swift heavy ions

Kucheyev, S. O.; Timmers, H.; Zou, J.; Williams, J.; Jagadish, C.; Li, Gang

Description

Wurtzite GaN epilayers bombarded at 300 K with 200 MeV ¹⁹⁷Au¹⁶⁺ ions are studied by a combination of transmission electron microscopy(TEM) and Rutherford backscattering/channeling spectrometry (RBS/C). Results reveal the formation of near-continuous tracks propagating throughout the entire ∼1.5-μm-thick GaN film. These tracks, ∼100 Å in diameter, exhibit a large degree of structural disordering but do not appear to be amorphous. Throughout the bombarded epilayer, high-resolution TEM reveals...[Show more]

CollectionsANU Research Publications
Date published: 2004-05-15
Type: Journal article
URI: http://hdl.handle.net/1885/15790
Source: Journal of Applied Physics
DOI: 10.1063/1.1703826

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