Skip navigation
Skip navigation

Lattice damage produced in GaN by swift heavy ions

Kucheyev, S. O.; Timmers, H.; Zou, J.; Williams, J.; Jagadish, C.; Li, Gang


Wurtzite GaN epilayers bombarded at 300 K with 200 MeV ¹⁹⁷Au¹⁶⁺ ions are studied by a combination of transmission electron microscopy(TEM) and Rutherford backscattering/channeling spectrometry (RBS/C). Results reveal the formation of near-continuous tracks propagating throughout the entire ∼1.5-μm-thick GaN film. These tracks, ∼100 Å in diameter, exhibit a large degree of structural disordering but do not appear to be amorphous. Throughout the bombarded epilayer, high-resolution TEM reveals...[Show more]

CollectionsANU Research Publications
Date published: 2004-05-15
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.1703826


File Description SizeFormat Image
01_Kucheyev_Lattice_damage_produced_in_GaN_2004.pdf697.78 kBAdobe PDFThumbnail

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  19 May 2020/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator