Enhanced optical properties of the GaAsN/GaAs quantum-well structure by the insertion of InAs monolayers
Microstructural and optical properties of InAs-inserted and reference single GaAsN/GaAs quantum-well (QW) structures grown by metalorganic chemical vapor deposition were investigated using cross-sectional transmission electron microscopy and photoluminescence (PL). Significant enhancement of PL intensity and a blueshift of PL emission were observed from the InAs-inserted GaAsN/GaAs QW structure, compared with the single GaAsN/GaAs QW structure. Strain compensation and In-induced reduction of N...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Gao_Enhanced_optical_properties_of_2004.pdf||Published Version||153.26 kB||Adobe PDF|
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