Skip navigation
Skip navigation

Enhanced optical properties of the GaAsN/GaAs quantum-well structure by the insertion of InAs monolayers

Gao, Q.; Tan, H. H.; Jagadish, C.; Sun, B. Q.; Gal, M.; Ouyang, L.; Zou, J.

Description

Microstructural and optical properties of InAs-inserted and reference single GaAsN/GaAs quantum-well (QW) structures grown by metalorganic chemical vapor deposition were investigated using cross-sectional transmission electron microscopy and photoluminescence (PL). Significant enhancement of PL intensity and a blueshift of PL emission were observed from the InAs-inserted GaAsN/GaAs QW structure, compared with the single GaAsN/GaAs QW structure. Strain compensation and In-induced reduction of N...[Show more]

CollectionsANU Research Publications
Date published: 2004-04-05
Type: Journal article
URI: http://hdl.handle.net/1885/15789
Source: Applied Physics Letters
DOI: 10.1063/1.1697628

Download

File Description SizeFormat Image
01_Gao_Enhanced_optical_properties_of_2004.pdfPublished Version153.26 kBAdobe PDFThumbnail


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  23 August 2018/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator