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Enhanced optical properties of the GaAsN/GaAs quantum-well structure by the insertion of InAs monolayers

Gao, Q.; Jagadish, C.; Sun, B. Q.; Gal, M.; Ouyang, L.; Zou, J.; Tan, Hark Hoe


Microstructural and optical properties of InAs-inserted and reference single GaAsN/GaAs quantum-well (QW) structures grown by metalorganic chemical vapor deposition were investigated using cross-sectional transmission electron microscopy and photoluminescence (PL). Significant enhancement of PL intensity and a blueshift of PL emission were observed from the InAs-inserted GaAsN/GaAs QW structure, compared with the single GaAsN/GaAs QW structure. Strain compensation and In-induced reduction of N...[Show more]

CollectionsANU Research Publications
Date published: 2004-04-05
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.1697628


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