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Fluorine-doping concentration and fictive temperature dependence of self-trapped holes in SiO[sub 2] glasses

Wang, R. P.; Tai, N.; Saito, K.; Ikushima, A. J.

Description

Fictive temperature (Tf) and fluorine (F)-doping concentration dependences of self-trapped holes (STHs) in silicaglasses created by UVirradiation at low temperatures have been studied by the electron-paramagnetic-resonance method. It was found that the yield of STH decreases with decreasing Tf and increasing F-doping concentration. In combination with infrared spectra measurements, the correlation among Tf, F-doping concentration, Si–O bond length, and Si–O–Si bond angle was elucidated. We...[Show more]

CollectionsANU Research Publications
Date published: 2005-07-18
Type: Journal article
URI: http://hdl.handle.net/1885/15786
Source: Journal of Applied Physics
DOI: 10.1063/1.1980536

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