Fluorine-doping concentration and fictive temperature dependence of self-trapped holes in SiO[sub 2] glasses
Fictive temperature (Tf) and fluorine (F)-doping concentration dependences of self-trapped holes (STHs) in silicaglasses created by UVirradiation at low temperatures have been studied by the electron-paramagnetic-resonance method. It was found that the yield of STH decreases with decreasing Tf and increasing F-doping concentration. In combination with infrared spectra measurements, the correlation among Tf, F-doping concentration, Si–O bond length, and Si–O–Si bond angle was elucidated. We...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Wang_Fluorine-doping_concentration_2005.pdf||Published Version||236.71 kB||Adobe PDF|
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