Interface stability in stressed solid-phase epitaxial growth
The role of applied stress on interface stability during Si solid-phaseepitaxialgrowth was investigated. Transmission electron microscopy observations of growthinterface evolution revealed in-plane uniaxial compression (tension) led to interface instability (stability). Additionally, level set simulations revealed that the stress-influenced interface instability was accurately modeled by adjusting the strength of the linear dependence of local interface velocity (rate of change of interface...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures|
|01_Morarka_Interface_stability_in_2011.pdf||Published Version||155.27 kB||Adobe PDF|
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