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Interface stability in stressed solid-phase epitaxial growth

Morarka, S.; Jin, S.; Rudawski, N. G.; Jones, K. S.; Law, M. E.; Elliman, R. G.


The role of applied stress on interface stability during Si solid-phaseepitaxialgrowth was investigated. Transmission electron microscopy observations of growthinterface evolution revealed in-plane uniaxial compression (tension) led to interface instability (stability). Additionally, level set simulations revealed that the stress-influenced interface instability was accurately modeled by adjusting the strength of the linear dependence of local interface velocity (rate of change of interface...[Show more]

CollectionsANU Research Publications
Date published: 2011-08-11
Type: Journal article
Source: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI: 10.1116/1.3610172


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