Interpretation of anomalous temperature dependence of anti-Stokes photoluminescence at GaInP₂/GaAs interface
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Xu, S. J.; Li, Q.; Dong, J.-R.; Chua, S. J.
In this letter, we report on temperature-dependent anti-Stokes photoluminescence (ASPL) at an interface between partially ordered GaInP₂ epilayer and GaAs substrate. It is found that the intensity of the ASPL depends strongly on temperature accompanying with a clear blueshift in energy. A localized-state luminescence model was employed to quantitatively interpret temperature dependence of the ASPL. Excellent agreement between the theory and experiment was obtained. Radiative recombination...[Show more]
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|Source:||Applied Physics Letters|
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