Interpretation of anomalous temperature dependence of anti-Stokes photoluminescence at GaInP₂/GaAs interface

Abstract

In this letter, we report on temperature-dependent anti-Stokes photoluminescence (ASPL) at an interface between partially ordered GaInP₂ epilayer and GaAs substrate. It is found that the intensity of the ASPL depends strongly on temperature accompanying with a clear blueshift in energy. A localized-state luminescence model was employed to quantitatively interpret temperature dependence of the ASPL. Excellent agreement between the theory and experiment was obtained. Radiative recombination mechanism of the up-converted carriers was discussed.