Interpretation of anomalous temperature dependence of anti-Stokes photoluminescence at GaInP₂/GaAs interface
In this letter, we report on temperature-dependent anti-Stokes photoluminescence (ASPL) at an interface between partially ordered GaInP₂ epilayer and GaAs substrate. It is found that the intensity of the ASPL depends strongly on temperature accompanying with a clear blueshift in energy. A localized-state luminescence model was employed to quantitatively interpret temperature dependence of the ASPL. Excellent agreement between the theory and experiment was obtained. Radiative recombination...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Xu_Interpretation_of_anomalous_2004.pdf||Published Version||46.08 kB||Adobe PDF|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.