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Phase transformations induced by spherical indentation in ion-implanted amorphous silicon

Haberl, Bianca; Bradby, J. E.; Ruffell, S.; Williams, J. S.; Munroe, P.


The deformation behavior of ion-implanted (unrelaxed) and annealed ion-implanted (relaxed) amorphous silicon(a-Si) under spherical indentation at room temperature has been investigated. It has been found that the mode of deformation depends critically on both the preparation of the amorphous film and the scale of the mechanical deformation.Ex situmeasurements, such as Raman microspectroscopy and cross-sectional transmission electron microscopy, as well as in situ electrical measurements reveal...[Show more]

CollectionsANU Research Publications
Date published: 2006-07-12
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.2210767


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