Dry-etch of As₂S₃ thin films for optical waveguide fabrication
Plasma etching to As₂S₃ thin films for optical waveguide fabrication has been studied using a helicon plasmaetcher. The etching effects using the processing gases or gas mixtures of O₂, Ar, and CF₄ were compared. It was found that the O₂plasma had no chemical etching effect to the As₂S₃, but it could oxidize the surface of the As₂S₃. The Ar plasma provided a strong ion sputtering effect to the films. The CF₄plasma exhibited a too strong chemical etch to the As₂S₃, leading to serious...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Vacuum Science & Technology A|
|01_Li_Dry-etch_of_As₂S₃_thin_films_2005.pdf||Published Version||218.72 kB||Adobe PDF|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.