Li, Weitang; Ruan, Yinlan; Luther-Davies, Barry; Rode, Andrei; Boswell, Rod
Plasma etching to As₂S₃ thin films for optical waveguide fabrication has been studied using a helicon plasmaetcher. The etching effects using the processing gases or gas mixtures of O₂, Ar, and CF₄ were compared. It was found that the O₂plasma had no chemical etching effect to the As₂S₃, but it could oxidize the surface of the As₂S₃. The Ar plasma provided a strong ion sputtering effect to the films. The CF₄plasma exhibited a too strong chemical etch to the As₂S₃, leading to serious...[Show more]
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