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Formation rates of iron-acceptor pairs in crystalline silicon

Macdonald, Daniel; Roth, Thomas; Deenapanray, Prakash N. K.; Bothe, Karsten; Pohl, Peter; Schmidt, Jan

Description

The characteristic association time constant describing the formation of iron-acceptor pairs in crystalline silicon has been measured for samples of various p-type dopant concentrations and species (B, Ga, and In) near room temperature. The results show that the dopant species has no impact on the pairing kinetics, suggesting that the pairing process is entirely limited by iron diffusion. This conclusion was corroborated by measurement of the activation energy of pair formation, which coincides...[Show more]

dc.contributor.authorMacdonald, Daniel
dc.contributor.authorRoth, Thomas
dc.contributor.authorDeenapanray, Prakash N. K.
dc.contributor.authorBothe, Karsten
dc.contributor.authorPohl, Peter
dc.contributor.authorSchmidt, Jan
dc.date.accessioned2015-10-01T00:43:29Z
dc.date.available2015-10-01T00:43:29Z
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/1885/15742
dc.description.abstractThe characteristic association time constant describing the formation of iron-acceptor pairs in crystalline silicon has been measured for samples of various p-type dopant concentrations and species (B, Ga, and In) near room temperature. The results show that the dopant species has no impact on the pairing kinetics, suggesting that the pairing process is entirely limited by iron diffusion. This conclusion was corroborated by measurement of the activation energy of pair formation, which coincides with the migration enthalpy of interstitial iron in silicon. The results also indicate that the pair-formation process occurs approximately twice as fast as predicted by a commonly used expression.
dc.description.sponsorshipThis work has been supported by the Australian Research Council and the State of Lower Saxony.
dc.publisherAmerican Institute of Physics
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0021-8979..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 1/10/15). Copyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at https://doi.org/10.1063/1.2102071
dc.sourceJournal of Applied Physics
dc.subjectKeywords: Crystalline silicon; Dopant species; Iron-acceptor pairs; Activation energy; Approximation theory; Crystalline materials; Diffusion; Enthalpy; Silicon; Iron
dc.titleFormation rates of iron-acceptor pairs in crystalline silicon
dc.typeJournal article
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.citationvolume98
dc.date.issued2005-10-19
local.identifier.absfor090699
local.identifier.ariespublicationMigratedxPub10870
local.publisher.urlhttps://www.aip.org/
local.type.statusPublished Version
local.contributor.affiliationMacDonald, Daniel, College of Engineering and Computer Science, College of Engineering and Computer Science, Research School of Engineering, The Australian National University
local.contributor.affiliationRoth, Thomas, College of Engineering and Computer Science, College of Engineering and Computer Science, Research School of Engineering, The Australian National University
local.contributor.affiliationDeenapanray, Prakash, College of Engineering and Computer Science, College of Engineering and Computer Science, Research School of Engineering, The Australian National University
local.contributor.affiliationBothe, Karsten, Institute for Solar Energy Research Hameln (ISFH), Germany
local.contributor.affiliationPohl, Peter, Institute for Solar Energy Research Hameln (ISFH), Germany
local.contributor.affiliationSchmidt, Jan , Institute for Solar Energy Research Hameln (ISFH), Germany
local.bibliographicCitation.issue8
local.bibliographicCitation.startpage083509
local.bibliographicCitation.lastpage5
local.identifier.doi10.1063/1.2102071
dc.date.updated2015-12-11T11:11:47Z
local.identifier.scopusID2-s2.0-27744486765
CollectionsANU Research Publications

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