Formation rates of iron-acceptor pairs in crystalline silicon
The characteristic association time constant describing the formation of iron-acceptor pairs in crystalline silicon has been measured for samples of various p-type dopant concentrations and species (B, Ga, and In) near room temperature. The results show that the dopant species has no impact on the pairing kinetics, suggesting that the pairing process is entirely limited by iron diffusion. This conclusion was corroborated by measurement of the activation energy of pair formation, which coincides...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Macdonald_Formation_rates_of_2005.pdf||Published Version||101.84 kB||Adobe PDF|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.