Skip navigation
Skip navigation

Recombination activity of iron-gallium and iron-indium pairs in silicon

Schmidt, Jan; Macdonald, Daniel


The recombination activity of iron-gallium (FeGa) and iron-indium (FeIn) pairs in crystalline silicon is studied by means of injection-dependent carrier lifetime measurements on Fe-implanted, Ga- and In-doped p-type silicon wafers of different resistivities (0.3–15Ωcm). Compared to FeB pairs, FeGa and FeIn pairs are found to be much more effective recombination centers in p-type silicon. Using Shockley–Read–Hall statistics we determine the energy level Et of the FeGa-related center to be 0.20eV...[Show more]

CollectionsANU Research Publications
Date published: 2005-06-06
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.1929096


File Description SizeFormat Image
01_Schmidt_Recombination_activity_of_2005.pdfPublished Version119.17 kBAdobe PDFThumbnail

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  19 May 2020/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator