Recombination activity of iron-gallium and iron-indium pairs in silicon
The recombination activity of iron-gallium (FeGa) and iron-indium (FeIn) pairs in crystalline silicon is studied by means of injection-dependent carrier lifetime measurements on Fe-implanted, Ga- and In-doped p-type silicon wafers of different resistivities (0.3–15Ωcm). Compared to FeB pairs, FeGa and FeIn pairs are found to be much more effective recombination centers in p-type silicon. Using Shockley–Read–Hall statistics we determine the energy level Et of the FeGa-related center to be 0.20eV...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Schmidt_Recombination_activity_of_2005.pdf||Published Version||119.17 kB||Adobe PDF|
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