Fluence, flux, and implantation temperature dependence of ion-implantation-induced defect production in 4H–SiC
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Slotte, J.; Saarinen, K.; Janson, M. S.; Hallén, A.; Kuznetsov, A. Yu.; Svensson, B. G.; Wong-Leung, Jennifer; Jagadish, C.
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Vacancy-type defect production in Al- and Si-implanted 4H–SiC has been studied as a function of ion fluence, ion flux, and implantation temperature in the projected ion range region by positron annihilation spectroscopy and Rutherford backscattering techniques. Ion channeling measurements show that the concentration of displaced silicon atoms increases rapidly with increasing ion fluence. In the ion fluence interval of 10¹³–10¹⁴cm¯² the positron annihilation parameters are roughly constant at a...[Show more]
dc.contributor.author | Slotte, J. | |
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dc.contributor.author | Saarinen, K. | |
dc.contributor.author | Janson, M. S. | |
dc.contributor.author | Hallén, A. | |
dc.contributor.author | Kuznetsov, A. Yu. | |
dc.contributor.author | Svensson, B. G. | |
dc.contributor.author | Wong-Leung, Jennifer | |
dc.contributor.author | Jagadish, C. | |
dc.date.accessioned | 2015-10-01T00:12:14Z | |
dc.date.available | 2015-10-01T00:12:14Z | |
dc.identifier.issn | 0021-8979 | |
dc.identifier.uri | http://hdl.handle.net/1885/15740 | |
dc.description.abstract | Vacancy-type defect production in Al- and Si-implanted 4H–SiC has been studied as a function of ion fluence, ion flux, and implantation temperature in the projected ion range region by positron annihilation spectroscopy and Rutherford backscattering techniques. Ion channeling measurements show that the concentration of displaced silicon atoms increases rapidly with increasing ion fluence. In the ion fluence interval of 10¹³–10¹⁴cm¯² the positron annihilation parameters are roughly constant at a defect level tentatively associated with the divacancy VCVSi. Above the ion fluence of 10¹⁴cm¯² larger vacancy clusters are formed. For implantations as a function of ion flux (cm¯²s¯¹), ion channeling and positron annihilation measurements behave similarly, i.e., indicating increasing damage in the projected range region with increasing ion flux. However, for samples implanted at different temperatures the positron annihilation parameter S shows a clear minimum at approximately 100°C, whereas the normalized backscattering yield decrease continuously with increasing implantation temperature. This is explained by the formation of larger vacancy clusters when the implantation temperature is increased. | |
dc.description.sponsorship | This work has been supported partly by the Nordic Academy for Education and Research Training (NorFa) and the Swedish Foundation for International cooperation in Research and Higher Education (STINT). | |
dc.publisher | American Institute of Physics | |
dc.rights | http://www.sherpa.ac.uk/romeo/issn/0021-8979..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 1/10/15). Copyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at https://doi.org/10.1063/1.1844618 | |
dc.source | Journal of Applied Physics | |
dc.subject | Keywords: Implantation temperature; Ion channelling; Sublattices; Vacancy clusters; Annealing; Crystal lattices; Functions; Heat treatment; Mathematical models; Neutron irradiation; Positron annihilation spectroscopy; Positrons; Recrystallization (metallurgy); Ruth | |
dc.title | Fluence, flux, and implantation temperature dependence of ion-implantation-induced defect production in 4H–SiC | |
dc.type | Journal article | |
local.description.notes | Imported from ARIES | |
local.description.refereed | Yes | |
local.identifier.citationvolume | 97 | |
dc.date.issued | 2005-01-06 | |
local.identifier.absfor | 020405 | |
local.identifier.ariespublication | MigratedxPub10756 | |
local.publisher.url | https://www.aip.org/ | |
local.type.status | Published Version | |
local.contributor.affiliation | Slotte, J, Helsinki University of Technology, Finland | |
local.contributor.affiliation | Saarinen, K, Helsinki University of Technology, Finland | |
local.contributor.affiliation | Janson, M S, Royal Institute of Technology, Sweden | |
local.contributor.affiliation | Hallen, A, Royal Institute of Technology, Sweden | |
local.contributor.affiliation | Kuznetsov, A Yu, University of Oslo, Norway | |
local.contributor.affiliation | Svensson, Bengt Gunnar, University of Oslo, Norway | |
local.contributor.affiliation | Wong-Leung, Yin-Yin (Jennifer), College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University | |
local.contributor.affiliation | Jagadish, Chennupati, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University | |
local.bibliographicCitation.issue | 3 | |
local.bibliographicCitation.startpage | 033513 | |
local.identifier.doi | 10.1063/1.1844618 | |
dc.date.updated | 2015-12-11T11:10:10Z | |
local.identifier.scopusID | 2-s2.0-13744258288 | |
Collections | ANU Research Publications |
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