Fluence, flux, and implantation temperature dependence of ion-implantation-induced defect production in 4H–SiC
Vacancy-type defect production in Al- and Si-implanted 4H–SiC has been studied as a function of ion fluence, ion flux, and implantation temperature in the projected ion range region by positron annihilation spectroscopy and Rutherford backscattering techniques. Ion channeling measurements show that the concentration of displaced silicon atoms increases rapidly with increasing ion fluence. In the ion fluence interval of 10¹³–10¹⁴cm¯² the positron annihilation parameters are roughly constant at a...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Slotte_Fluence,_flux,_and_2005.pdf||Published Version||278.88 kB||Adobe PDF|
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