Deenapanray, P. N. K.; Petravic, M.; Jagadish, C.; Krispin, M.; Auret, F. D.
Impurity-free disordering (IFD) of uniformly dopedp‐GaAsepitaxial layers was achieved using either undoped or doped (Ga or P) spin-on-glass (SOG) in conjunction with rapid thermal annealing in the temperature range from 800to925°C. Capacitance-voltage measurements showed a pronounced increase in the doping concentration (NA) in the near-surface region of the layers disordered using both undoped and P:SOG. The increase in NA showed an Arrhenius-like dependence on the inverse of annealing...[Show more]
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.