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Electrical characterization of p-GaAs epilayers disordered by doped spin-on-glass

Deenapanray, P. N. K.; Petravic, M.; Jagadish, C.; Krispin, M.; Auret, F. D.


Impurity-free disordering (IFD) of uniformly dopedp‐GaAsepitaxial layers was achieved using either undoped or doped (Ga or P) spin-on-glass (SOG) in conjunction with rapid thermal annealing in the temperature range from 800to925°C. Capacitance-voltage measurements showed a pronounced increase in the doping concentration (NA) in the near-surface region of the layers disordered using both undoped and P:SOG. The increase in NA showed an Arrhenius-like dependence on the inverse of annealing...[Show more]

CollectionsANU Research Publications
Date published: 2005-01-19
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.1846140


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