Electrical characterization of p-GaAs epilayers disordered by doped spin-on-glass
Impurity-free disordering (IFD) of uniformly dopedp‐GaAsepitaxial layers was achieved using either undoped or doped (Ga or P) spin-on-glass (SOG) in conjunction with rapid thermal annealing in the temperature range from 800to925°C. Capacitance-voltage measurements showed a pronounced increase in the doping concentration (NA) in the near-surface region of the layers disordered using both undoped and P:SOG. The increase in NA showed an Arrhenius-like dependence on the inverse of annealing...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Deenapanray_Electrical_characterization_of_2005.pdf||Published Version||289.07 kB||Adobe PDF|
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