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Mechanical properties of ZnO epitaxial layers grown on a- and c-axis sapphire

Coleman, Victoria A; Bradby, J. E.; Jagadish, C.; Munroe, P.; Heo, Y. W.; Pearton, S. J.; Norton, D P; Inoue, M.; Yano, M.

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The mechanical properties of zinc oxide epitaxial layers grown on a- and c-axis sapphire have been studied by spherical nanoindentation and cross-sectional transmission electron microscopy. As-grown threading dislocations, which are characteristic of epitaxialmaterial, combined with the presence of the much harder, underlying substrate are found to have a significant effect on the mechanical behavior of ZnO epilayers as compared to bulk material. Epilayer material is found to be significantly...[Show more]

dc.contributor.authorColeman, Victoria A
dc.contributor.authorBradby, J. E.
dc.contributor.authorJagadish, C.
dc.contributor.authorMunroe, P.
dc.contributor.authorHeo, Y. W.
dc.contributor.authorPearton, S. J.
dc.contributor.authorNorton, D P
dc.contributor.authorInoue, M.
dc.contributor.authorYano, M.
dc.date.accessioned2015-09-29T06:25:54Z
dc.date.available2015-09-29T06:25:54Z
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/1885/15729
dc.description.abstractThe mechanical properties of zinc oxide epitaxial layers grown on a- and c-axis sapphire have been studied by spherical nanoindentation and cross-sectional transmission electron microscopy. As-grown threading dislocations, which are characteristic of epitaxialmaterial, combined with the presence of the much harder, underlying substrate are found to have a significant effect on the mechanical behavior of ZnO epilayers as compared to bulk material. Epilayer material is found to be significantly harder than its bulk counterpart. For a-axis epilayers, analysis of load–unload data yields a hardness of 6.6±1.2GPa, and 5.75±0.8GPa for c-axis layers. We attribute this increased hardness to strain compensation via the presence of as-grown defects. These defects inhibit the slip mechanism responsible for relative softness of bulk single crystals. The absence of pop-in events from analyzed continuous-load nanoindentation data is further evidence for strain compensation by native defects within the epilayers. Large variations in the spread of collected data are indicative of inhomegenity in the epilayers.
dc.description.sponsorshipThe University of Sydney, for constructive comments and support. The work at UF is partially supported by the AFOSR under Grant Nos. F49620-03-1-0370 sT.S.d and NSF DMR 0400416.
dc.publisherAmerican Institute of Physics
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 29/09/15). Copyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Coleman, V. A., et al. "Mechanical properties of ZnO epitaxial layers grown on a-and c-axis sapphire." Applied Physics Letters 86.20 (2005): 203105.) and may be found at https://doi.org/10.1063/1.1929874
dc.sourceApplied Physics Letters
dc.subjectKeywords: Bulk counterpart; Epitaxial layers growth; Nanoindentation; Semiconductor processing; Epitaxial growth; Luminescence; Sapphire; Semiconductor devices; Signal processing; Single crystals; Thermal effects; Zinc oxide
dc.titleMechanical properties of ZnO epitaxial layers grown on a- and c-axis sapphire
dc.typeJournal article
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.citationvolume86
dc.date.issued2005-05-11
local.identifier.absfor020406
local.identifier.ariespublicationMigratedxPub10742
local.publisher.urlhttps://www.aip.org/
local.type.statusPublished Version
local.contributor.affiliationColeman, Victoria A, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationBradby, Jodie, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationMunroe, Paul, University of New South Wales, Australia
local.contributor.affiliationHeo, Y W, University of Florida, United States of America
local.contributor.affiliationPearton, S J, University of Florida, United States of America
local.contributor.affiliationNorton, D P, University of Florida, United States of America
local.contributor.affiliationInoue, Masataka, Osaka Institute of Technology, Japan
local.contributor.affiliationYano, Mitsuaki, Osaka Institute of Technology, Japan
local.bibliographicCitation.issue20
local.bibliographicCitation.startpage203105
local.identifier.doi10.1063/1.1929874
dc.date.updated2015-12-11T11:09:53Z
local.identifier.scopusID2-s2.0-20844455287
CollectionsANU Research Publications

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