Skip navigation
Skip navigation

Doping Incorporation in InAs nanowires characterized by capacitance measurements

Astromskas, Gvidas; Storm, Kristian; Karlström, Olov; Caroff, Philippe; Borgström, Magnus; Wernersson, Lars-Erik


Sn and Se dopedInAsnanowires are characterized using a capacitance-voltage technique where the threshold voltages of nanowirecapacitors with different diameter are determined and analyzed using an improved radial metal-insulator-semiconductor field-effect transistor model. This allows for a separation of doping in the core of the nanowire from the surface charge at the side facets of the nanowire. The data show that the doping level in the InAsnanowire can be controlled on the level between...[Show more]

CollectionsANU Research Publications
Date published: 2010-09-01
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.3475356


File Description SizeFormat Image
01_Astromskas_Doping_Incorporation_in_InAs_2010.pdfPublished Version244.31 kBAdobe PDFThumbnail

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  19 May 2020/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator