Doping Incorporation in InAs nanowires characterized by capacitance measurements
Sn and Se dopedInAsnanowires are characterized using a capacitance-voltage technique where the threshold voltages of nanowirecapacitors with different diameter are determined and analyzed using an improved radial metal-insulator-semiconductor field-effect transistor model. This allows for a separation of doping in the core of the nanowire from the surface charge at the side facets of the nanowire. The data show that the doping level in the InAsnanowire can be controlled on the level between...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Astromskas_Doping_Incorporation_in_InAs_2010.pdf||Published Version||244.31 kB||Adobe PDF|
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