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Doping Incorporation in InAs nanowires characterized by capacitance measurements

Astromskas, Gvidas; Storm, Kristian; Karlström, Olov; Caroff, Philippe; Borgström, Magnus; Wernersson, Lars-Erik

Description

Sn and Se dopedInAsnanowires are characterized using a capacitance-voltage technique where the threshold voltages of nanowirecapacitors with different diameter are determined and analyzed using an improved radial metal-insulator-semiconductor field-effect transistor model. This allows for a separation of doping in the core of the nanowire from the surface charge at the side facets of the nanowire. The data show that the doping level in the InAsnanowire can be controlled on the level between...[Show more]

CollectionsANU Research Publications
Date published: 2010-09-01
Type: Journal article
URI: http://hdl.handle.net/1885/15709
Source: Journal of Applied Physics
DOI: 10.1063/1.3475356

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