Gold-free GaAs/GaAsSb heterostructure nanowires grown on silicon
Growth of GaAs/GaAsSb heterostructurenanowires on silicon without the need for gold seed particles is presented. A high vertical yield of GaAsnanowires is first obtained, and then GaAsₓSb₁ˍₓ segments are successfully grown axially in these nanowires. GaAsSb can also be integrated as a shell around the GaAs core. Finally, two GaAsSb segments are grown inside a GaAsnanowire and passivated using an AlₓGa₁ˍₓAs shell. It is found that no stacking faults or twin planes occur in the GaAsSb segments.
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Plissard_Gold-free_GaAs/GaAsSb_2010.pdf||Published Version||340.2 kB||Adobe PDF|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.