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Gold-free GaAs/GaAsSb heterostructure nanowires grown on silicon

Plissard, S.; Dick, K. A.; Wallart, X.; Caroff, P.


Growth of GaAs/GaAsSb heterostructurenanowires on silicon without the need for gold seed particles is presented. A high vertical yield of GaAsnanowires is first obtained, and then GaAsₓSb₁ˍₓ segments are successfully grown axially in these nanowires. GaAsSb can also be integrated as a shell around the GaAs core. Finally, two GaAsSb segments are grown inside a GaAsnanowire and passivated using an AlₓGa₁ˍₓAs shell. It is found that no stacking faults or twin planes occur in the GaAsSb segments.

CollectionsANU Research Publications
Date published: 2010-03-22
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.3367746


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