Temperature dependent properties of InSb and InAs nanowire field-effect transistors
We present temperature dependent electrical measurements on InSb and InAs nanowire field-effect transistors (FETs). The FETs are fabricated from InAs/InSb heterostructure nanowires, where one complete transistor is defined within each of the two segments. Both the InSb and the InAs FETs are n-type with good current saturation and low voltage operation. The off-current for the InSb FET shows a strong temperature dependence, which we attribute to a barrier lowering due to an increased...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Nilsson_Temperature_dependent_2010.pdf||Published Version||156.25 kB||Adobe PDF|
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