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Temperature dependent properties of InSb and InAs nanowire field-effect transistors

Nilsson, Henrik A.; Caroff, Philippe; Thelander, Claes; Lind, Erik; Karlström, Olov; Wernersson, Lars-Erik


We present temperature dependent electrical measurements on InSb and InAs nanowire field-effect transistors (FETs). The FETs are fabricated from InAs/InSb heterostructure nanowires, where one complete transistor is defined within each of the two segments. Both the InSb and the InAs FETs are n-type with good current saturation and low voltage operation. The off-current for the InSb FET shows a strong temperature dependence, which we attribute to a barrier lowering due to an increased...[Show more]

CollectionsANU Research Publications
Date published: 2010-04-16
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.3402760


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