Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors
We present temperature dependent electrical measurements on n-type InAs/InSb nanowireheterostructurefield-effect transistors. The barrier height of the heterostructure junction is determined to be 220 meV, indicating a broken bandgap alignment. A clear asymmetry is observed when applying a bias to either the InAs or the InSb side of the junction. Impact ionization and band-to-band tunneling is more pronounced when the large voltage drop occurs in the narrow bandgapInSb segment. For small...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Nilsson_Unipolar_and_bipolar_operation_2011.pdf||Published Version||116.01 kB||Adobe PDF|
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