Nilsson, Henrik A.; Caroff, Philippe; Lind, Erik; Pistol, Mats-Erik; Thelander, Claes; Wernersson, Lars-Erik
We present temperature dependent electrical measurements on n-type InAs/InSb nanowireheterostructurefield-effect transistors. The barrier height of the heterostructure junction is determined to be 220 meV, indicating a broken bandgap alignment. A clear asymmetry is observed when applying a bias to either the InAs or the InSb side of the junction. Impact ionization and band-to-band tunneling is more pronounced when the large voltage drop occurs in the narrow bandgapInSb segment. For small...[Show more]
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