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Acceptor-like deep level defects in ion-implanted ZnO

Vines, L.; Wong-Leung, J.; Jagadish, C.; Quemener, V.; Monakhov, E. V.; Svensson, B. G.

Description

N-type ZnO samples have been implanted with MeV Zn⁺ ions at room temperature to doses between 1×10⁸ and 2×10¹⁰cm⁻², and the defect evolution has been studied by capacitance-voltage and deep level transient spectroscopy measurements. The results show a dose dependent compensation by acceptor-like defects along the implantation depth profile, and at least four ion-induced deep-level defects arise, where two levels with energy positions of 1.06 and 1.2 eV below the conduction band increase...[Show more]

CollectionsANU Research Publications
Date published: 2012-05-22
Type: Journal article
URI: http://hdl.handle.net/1885/15696
Source: Applied Physics Letters
DOI: 10.1063/1.4720514

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