Acceptor-like deep level defects in ion-implanted ZnO
N-type ZnO samples have been implanted with MeV Zn⁺ ions at room temperature to doses between 1×10⁸ and 2×10¹⁰cm⁻², and the defect evolution has been studied by capacitance-voltage and deep level transient spectroscopy measurements. The results show a dose dependent compensation by acceptor-like defects along the implantation depth profile, and at least four ion-induced deep-level defects arise, where two levels with energy positions of 1.06 and 1.2 eV below the conduction band increase...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Vines_Acceptor-like_deep_level_2012.pdf||Published Version||1 MB||Adobe PDF|
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