Acceptor-like deep level defects in ion-implanted ZnO

Abstract

N-type ZnO samples have been implanted with MeV Zn⁺ ions at room temperature to doses between 1×10⁸ and 2×10¹⁰cm⁻², and the defect evolution has been studied by capacitance-voltage and deep level transient spectroscopy measurements. The results show a dose dependent compensation by acceptor-like defects along the implantation depth profile, and at least four ion-induced deep-level defects arise, where two levels with energy positions of 1.06 and 1.2 eV below the conduction band increase linearly with ion dose and are attributed to intrinsic defects. Moreover, a re-distribution of defects as a function of depth is observed already at temperatures below 400 K.