Parameter space mapping of InAs nanowire crystal structure
Crystal structure and defects have been shown to have a strong impact on III-Vnanowire properties. Recently, it was demonstrated that the issue of random stacking and polytypism in semiconductornanowires can often be controlled using accessible growth parameters (such as temperature, diameter, and V/III ratio). In addition, it has been shown that crystal phase can be tuned selectively between cubic zinc blende and hexagonal wurtzite within individual nanowires of III-V materials such as InAs....[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures|
|01_Dick_Parameter_space_mapping_of_2011.pdf||Published Version||197.25 kB||Adobe PDF|
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