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Parameter space mapping of InAs nanowire crystal structure

Dick, Kimberly A.; Bolinsson, Jessica; Messing, Maria E.; Lehmann, Sebastian; Johansson, Jonas; Caroff, Philippe

Description

Crystal structure and defects have been shown to have a strong impact on III-Vnanowire properties. Recently, it was demonstrated that the issue of random stacking and polytypism in semiconductornanowires can often be controlled using accessible growth parameters (such as temperature, diameter, and V/III ratio). In addition, it has been shown that crystal phase can be tuned selectively between cubic zinc blende and hexagonal wurtzite within individual nanowires of III-V materials such as InAs....[Show more]

CollectionsANU Research Publications
Date published: 2011-06-03
Type: Journal article
URI: http://hdl.handle.net/1885/15691
Source: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI: 10.1116/1.3593457

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