Low-temperature, site selective graphitization of SiC via ion implantation and pulsed laser annealing
A technique is presented to selectively graphitize regions of SiC by ion implantation and pulsed laser annealing (PLA). Nanoscale features are patterned over large areas by multi-ion beam lithography and subsequently converted to few-layer graphene via PLA in air. Graphitization occurs only where ions have been implanted and without elevating the temperature of the surrounding substrate. Samples were characterized using Raman spectroscopy, ion scattering/channeling, SEM, and AFM, from which the...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Lemaitre_Low-temperature,_site_2012.pdf||Published Version||1.92 MB||Adobe PDF|
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