A model for low temperature interface passivation between amorphous and crystalline silicon
Download (735.2 kB)
-
Altmetric Citations
Description
Excellent passivation of the crystalline surface is known to occur following post-deposition thermal annealing of intrinsic hydrogenated amorphous silicon thin-film layers deposited by plasma-enhanced chemical vapour deposition. The hydrogen primarily responsible for passivating dangling bonds at the crystalline silicon surface has often been singularly linked to a bulk diffusion mechanism within the thin-film layer. In this work, the origins and the mechanism by which hydrogen passivation...[Show more]
dc.contributor.author | Mitchell, J. | |
---|---|---|
dc.date.accessioned | 2015-09-23T02:21:15Z | |
dc.date.available | 2015-09-23T02:21:15Z | |
dc.identifier.issn | 0021-8979 | |
dc.identifier.uri | http://hdl.handle.net/1885/15657 | |
dc.description.abstract | Excellent passivation of the crystalline surface is known to occur following post-deposition thermal annealing of intrinsic hydrogenated amorphous silicon thin-film layers deposited by plasma-enhanced chemical vapour deposition. The hydrogen primarily responsible for passivating dangling bonds at the crystalline silicon surface has often been singularly linked to a bulk diffusion mechanism within the thin-film layer. In this work, the origins and the mechanism by which hydrogen passivation occurs are more accurately identified by way of an interface-diffusion model, which operates independent of the a-Si:H bulk. This first-principles approach achieved good agreement with experimental results, describing a linear relationship between the average diffusion lengths and anneals temperature. Similarly, the time hydrogen spends between shallow-trap states is shown to decrease rapidly with increases in temperature circuitously related to probabilistic displacement distances. The interface reconfiguration model proposed in this work demonstrates the importance of interface states and identifies the misconception surrounding hydrogen passivation of the c-Si surface. | |
dc.description.sponsorship | This work was supported by the Australian Research Council. | |
dc.format | 7 pages | |
dc.publisher | American Institute of Physics | |
dc.rights | http://www.sherpa.ac.uk/romeo/issn/0021-8979..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 23/09/15). Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Mitchell, J. "A model for low temperature interface passivation between amorphous and crystalline silicon." Journal of Applied Physics 114.19 (2013): 193702.) and may be found at https://doi.org/10.1063/1.4824102 | |
dc.source | Journal of Applied Physics | |
dc.title | A model for low temperature interface passivation between amorphous and crystalline silicon | |
dc.type | Journal article | |
local.description.notes | Imported from ARIES | |
local.identifier.citationvolume | 114 | |
dc.date.issued | 2013-11-15 | |
local.identifier.absfor | 090605 | |
local.identifier.ariespublication | f5625xPUB4720 | |
local.publisher.url | https://www.aip.org/ | |
local.type.status | Published Version | |
local.contributor.affiliation | Mitchell, Jonathon, College of Engineering and Computer Science, College of Engineering and Computer Science, Research School of Engineering, The Australian National University | |
local.bibliographicCitation.issue | 19 | |
local.bibliographicCitation.startpage | 193702 | |
local.identifier.doi | 10.1063/1.4824102 | |
local.identifier.absseo | 850504 | |
dc.date.updated | 2015-12-11T09:08:46Z | |
local.identifier.scopusID | 2-s2.0-84888353268 | |
Collections | ANU Research Publications |
Download
File | Description | Size | Format | Image |
---|---|---|---|---|
01_Mitchell_A_model_for_low_temperature_2013.pdf | Published Version | 735.2 kB | Adobe PDF |
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.
Updated: 17 November 2022/ Responsible Officer: University Librarian/ Page Contact: Library Systems & Web Coordinator