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A model for low temperature interface passivation between amorphous and crystalline silicon

Mitchell, J.

Description

Excellent passivation of the crystalline surface is known to occur following post-deposition thermal annealing of intrinsic hydrogenated amorphous silicon thin-film layers deposited by plasma-enhanced chemical vapour deposition. The hydrogen primarily responsible for passivating dangling bonds at the crystalline silicon surface has often been singularly linked to a bulk diffusion mechanism within the thin-film layer. In this work, the origins and the mechanism by which hydrogen passivation...[Show more]

dc.contributor.authorMitchell, J.
dc.date.accessioned2015-09-23T02:21:15Z
dc.date.available2015-09-23T02:21:15Z
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/1885/15657
dc.description.abstractExcellent passivation of the crystalline surface is known to occur following post-deposition thermal annealing of intrinsic hydrogenated amorphous silicon thin-film layers deposited by plasma-enhanced chemical vapour deposition. The hydrogen primarily responsible for passivating dangling bonds at the crystalline silicon surface has often been singularly linked to a bulk diffusion mechanism within the thin-film layer. In this work, the origins and the mechanism by which hydrogen passivation occurs are more accurately identified by way of an interface-diffusion model, which operates independent of the a-Si:H bulk. This first-principles approach achieved good agreement with experimental results, describing a linear relationship between the average diffusion lengths and anneals temperature. Similarly, the time hydrogen spends between shallow-trap states is shown to decrease rapidly with increases in temperature circuitously related to probabilistic displacement distances. The interface reconfiguration model proposed in this work demonstrates the importance of interface states and identifies the misconception surrounding hydrogen passivation of the c-Si surface.
dc.description.sponsorshipThis work was supported by the Australian Research Council.
dc.format7 pages
dc.publisherAmerican Institute of Physics
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0021-8979..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 23/09/15). Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Mitchell, J. "A model for low temperature interface passivation between amorphous and crystalline silicon." Journal of Applied Physics 114.19 (2013): 193702.) and may be found at https://doi.org/10.1063/1.4824102
dc.sourceJournal of Applied Physics
dc.titleA model for low temperature interface passivation between amorphous and crystalline silicon
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume114
dc.date.issued2013-11-15
local.identifier.absfor090605
local.identifier.ariespublicationf5625xPUB4720
local.publisher.urlhttps://www.aip.org/
local.type.statusPublished Version
local.contributor.affiliationMitchell, Jonathon, College of Engineering and Computer Science, College of Engineering and Computer Science, Research School of Engineering, The Australian National University
local.bibliographicCitation.issue19
local.bibliographicCitation.startpage193702
local.identifier.doi10.1063/1.4824102
local.identifier.absseo850504
dc.date.updated2015-12-11T09:08:46Z
local.identifier.scopusID2-s2.0-84888353268
CollectionsANU Research Publications

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