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A model for low temperature interface passivation between amorphous and crystalline silicon

Mitchell, J.

Description

Excellent passivation of the crystalline surface is known to occur following post-deposition thermal annealing of intrinsic hydrogenated amorphous silicon thin-film layers deposited by plasma-enhanced chemical vapour deposition. The hydrogen primarily responsible for passivating dangling bonds at the crystalline silicon surface has often been singularly linked to a bulk diffusion mechanism within the thin-film layer. In this work, the origins and the mechanism by which hydrogen passivation...[Show more]

CollectionsANU Research Publications
Date published: 2013-11-15
Type: Journal article
URI: http://hdl.handle.net/1885/15657
Source: Journal of Applied Physics
DOI: 10.1063/1.4824102

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