A model for low temperature interface passivation between amorphous and crystalline silicon
Excellent passivation of the crystalline surface is known to occur following post-deposition thermal annealing of intrinsic hydrogenated amorphous silicon thin-film layers deposited by plasma-enhanced chemical vapour deposition. The hydrogen primarily responsible for passivating dangling bonds at the crystalline silicon surface has often been singularly linked to a bulk diffusion mechanism within the thin-film layer. In this work, the origins and the mechanism by which hydrogen passivation...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Mitchell_A_model_for_low_temperature_2013.pdf||Published Version||735.2 kB||Adobe PDF|
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