Al2O3/TiO2 stack layers for effective surface passivation of crystalline silicon
For silicon surface passivation, we investigate stack layers consisting of a thin Al₂O₃ layer and a TiO₂capping layer deposited by means of thermal atomic layer deposition (ALD). In this work, we studied the influence of different thermal post-deposition treatments and film thickness for the activation of passivating ALD Al₂O₃ single layers and Al₂O₃/TiO₂ stack layers. Our experiments show a substantial improvement of the passivation for the Al₂O₃/TiO₂ stack layers compared to a thin single...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Suh_Al2O3/TiO2_stack_layers_for_2013.pdf||Published Version||1.25 MB||Adobe PDF|
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