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Al2O3/TiO2 stack layers for effective surface passivation of crystalline silicon

Suh, Dongchul; Choi, Duk-Yong; Weber, Klaus J.


For silicon surface passivation, we investigate stack layers consisting of a thin Al₂O₃ layer and a TiO₂capping layer deposited by means of thermal atomic layer deposition (ALD). In this work, we studied the influence of different thermal post-deposition treatments and film thickness for the activation of passivating ALD Al₂O₃ single layers and Al₂O₃/TiO₂ stack layers. Our experiments show a substantial improvement of the passivation for the Al₂O₃/TiO₂ stack layers compared to a thin single...[Show more]

CollectionsANU Research Publications
Date published: 2013-10-16
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.4825258


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