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Supersaturating silicon with transition metals by ion implantation and pulsed laser melting

Recht, Daniel; Smith, Matthew J.; Charnvanichborikarn, Supakit; Sullivan, Joseph T.; Winkler, Mark T.; Mathews, Jay; Warrender, Jeffrey M.; Buonassisi, Tonio; Williams, James S.; Gradečak, Silvija; Aziz, Michael J.


We investigate the possibility of creating an intermediate band semiconductor by supersaturating Si with a range of transition metals (Au, Co, Cr, Cu, Fe, Pd, Pt, W, and Zn) using ion implantation followed by pulsed laser melting (PLM). Structural characterization shows evidence of either surface segregation or cellular breakdown in all transition metals investigated, preventing the formation of high supersaturations. However, concentration-depth profiling reveals that regions of Si...[Show more]

CollectionsANU Research Publications
Date published: 2013-09-27
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.4821240


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