Skip navigation
Skip navigation

Supersaturating silicon with transition metals by ion implantation and pulsed laser melting

Recht, Daniel; Smith, Matthew J.; Charnvanichborikarn, Supakit; Sullivan, Joseph T.; Winkler, Mark T.; Mathews, Jay; Warrender, Jeffrey M.; Buonassisi, Tonio; Williams, James S.; Gradečak, Silvija; Aziz, Michael J.

Description

We investigate the possibility of creating an intermediate band semiconductor by supersaturating Si with a range of transition metals (Au, Co, Cr, Cu, Fe, Pd, Pt, W, and Zn) using ion implantation followed by pulsed laser melting (PLM). Structural characterization shows evidence of either surface segregation or cellular breakdown in all transition metals investigated, preventing the formation of high supersaturations. However, concentration-depth profiling reveals that regions of Si...[Show more]

CollectionsANU Research Publications
Date published: 2013-09-27
Type: Journal article
URI: http://hdl.handle.net/1885/15651
Source: Journal of Applied Physics
DOI: 10.1063/1.4821240

Download

File Description SizeFormat Image
01_Recht_Supersaturating_silicon_with_2013.pdfPublished Version1.41 MBAdobe PDFThumbnail


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  23 August 2018/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator