Band offsets at zincblende-wurtzite GaAs nanowire sidewall surfaces
The band structure and the Fermi level pinning at clean and well-ordered sidewall surfaces of zincblende (ZB)-wurtzite (WZ) GaAs nanowires are investigated by scanning tunneling spectroscopy and density functional theory calculations. The WZ-ZB phase transition in GaAs nanowires introduces p-i junctions at the sidewall surfaces. This is caused by the presence of numerous steps, which induce a Fermi level pinning at different energies on the non-polar WZ and ZB sidewall facets.
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Capiod_Band_offsets_at_2013.pdf||Published Version||1.37 MB||Adobe PDF|
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