Band offsets at zincblende-wurtzite GaAs nanowire sidewall surfaces
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Capiod, P.; Xu, T.; Nys, J. P.; Berthe, M.; Patriarche, G.; Lymperakis, L.; Neugebauer, J.; Caroff, P.; Dunin-Borkowski, R. E.; Ebert, Ph.; Grandidier, B.
Description
The band structure and the Fermi level pinning at clean and well-ordered sidewall surfaces of zincblende (ZB)-wurtzite (WZ) GaAs nanowires are investigated by scanning tunneling spectroscopy and density functional theory calculations. The WZ-ZB phase transition in GaAs nanowires introduces p-i junctions at the sidewall surfaces. This is caused by the presence of numerous steps, which induce a Fermi level pinning at different energies on the non-polar WZ and ZB sidewall facets.
Collections | ANU Research Publications |
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Date published: | 2013-09-18 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/15647 |
Source: | Applied Physics Letters |
DOI: | 10.1063/1.4821293 |
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01_Capiod_Band_offsets_at_2013.pdf | Published Version | 1.37 MB | Adobe PDF |
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