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Improved phase-change characteristics of Zn-doped amorphous Sb₇Te₃ films for high-speed and low-power phase change memory

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Wang, Guoxiang; Shen, Xiang; Nie, Qiuhua; Wang, R. P.; Wu, Liangcai; Lu, Yegang; Dai, Shixun; Xu, Tiefeng; Chen, Yimin

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The superior performance of Zn-doped Sb₇Te₃ films might be favorable for the application in phase change memory. It was found that Zn dopants were able to suppress phase separation and form single stable Sb2Te crystal grain, diminish the grain size, and enhance the amorphous thermal stability of Sb₇Te₃ film. Especially, Zn 30.19(Sb₇Te₃)69.81 film has higher crystallization temperature (∼258 °C), larger crystallization activation energy (∼4.15 eV), better data retention (∼170.6 °C for 10 yr),...[Show more]

dc.contributor.authorWang, Guoxiang
dc.contributor.authorShen, Xiang
dc.contributor.authorNie, Qiuhua
dc.contributor.authorWang, R. P.
dc.contributor.authorWu, Liangcai
dc.contributor.authorLu, Yegang
dc.contributor.authorDai, Shixun
dc.contributor.authorXu, Tiefeng
dc.contributor.authorChen, Yimin
dc.date.accessioned2015-09-22T05:59:07Z
dc.date.available2015-09-22T05:59:07Z
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/1885/15644
dc.description.abstractThe superior performance of Zn-doped Sb₇Te₃ films might be favorable for the application in phase change memory. It was found that Zn dopants were able to suppress phase separation and form single stable Sb2Te crystal grain, diminish the grain size, and enhance the amorphous thermal stability of Sb₇Te₃ film. Especially, Zn 30.19(Sb₇Te₃)69.81 film has higher crystallization temperature (∼258 °C), larger crystallization activation energy (∼4.15 eV), better data retention (∼170.6 °C for 10 yr), wider band gap (∼0.73 eV), and higher crystalline resistance. The minimum times for crystallization of Zn 30.19(Sb₇Te₃)69.81 were revealed to be as short as ∼10 ns at a given proper laser power of 70 mW.
dc.description.sponsorshipThis work was financially supported by the International Science & Technology Cooperation Program of China (Grant No. 2011DFA12040), the National Program on Key Basic Research Project (973 Program) (Grant No. 2012CB722703), the Natural Science Foundation of China (Grant Nos. 61008041 and 60978058), the CAS Special Grant for Postgraduate Research, Innovation and Practice, the Program for Innovative Research Team of Ningbo city (Grant No. 2009B21007), and sponsored by K. C. Wong Magna Fund in Ningbo University.
dc.format5 pages
dc.publisherAmerican Institute of Physics
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 22/09/15). Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Wang, Guoxiang, et al. "Improved phase-change characteristics of Zn-doped amorphous Sb7Te3 films for high-speed and low-power phase change memory." Applied Physics Letters 103.3 (2013): 031914.) and may be found at https://doi.org/10.1063/1.4816062
dc.sourceApplied Physics Letters
dc.subjectKeywords: Crystal grains; Crystallization activation energy; Crystallization temperature; Data retention; Grain size; Laser power; Low Power; Phase changes; Activation energy; Amorphous films; Doping (additives); Phase separation; Zinc
dc.titleImproved phase-change characteristics of Zn-doped amorphous Sb₇Te₃ films for high-speed and low-power phase change memory
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume103
dc.date.issued2013-07-17
local.identifier.absfor020400
local.identifier.absfor091200
local.identifier.absfor020500
local.identifier.ariespublicationf5625xPUB4246
local.publisher.urlhttps://www.aip.org/
local.type.statusPublished Version
local.contributor.affiliationWang, Guoxiang, Ningbo University, China
local.contributor.affiliationShen, Xiang, Ningbo University, China
local.contributor.affiliationNie, Qiuhua, Ningbo University, China
local.contributor.affiliationWang, Rongping, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Laser Physics Centre, The Australian National University
local.contributor.affiliationWu, Liangcai, Chinese Academy of Sciences, China
local.contributor.affiliationLu, Yegang, Ningbo University, China
local.contributor.affiliationDai, Shixun, Ningbo University, China
local.contributor.affiliationXu, Tiefeng, Ningbo University, China
local.contributor.affiliationChen, Yimin, Ningbo University, China
local.bibliographicCitation.issue3
local.bibliographicCitation.startpage031914
local.identifier.doi10.1063/1.4816062
dc.date.updated2016-02-24T09:23:10Z
local.identifier.scopusID2-s2.0-84881499103
local.identifier.thomsonID000322146300039
CollectionsANU Research Publications

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