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Improved phase-change characteristics of Zn-doped amorphous Sb₇Te₃ films for high-speed and low-power phase change memory

Wang, Guoxiang; Shen, Xiang; Nie, Qiuhua; Wang, R. P.; Wu, Liangcai; Lu, Yegang; Dai, Shixun; Xu, Tiefeng; Chen, Yimin


The superior performance of Zn-doped Sb₇Te₃ films might be favorable for the application in phase change memory. It was found that Zn dopants were able to suppress phase separation and form single stable Sb2Te crystal grain, diminish the grain size, and enhance the amorphous thermal stability of Sb₇Te₃ film. Especially, Zn 30.19(Sb₇Te₃)69.81 film has higher crystallization temperature (∼258 °C), larger crystallization activation energy (∼4.15 eV), better data retention (∼170.6 °C for 10 yr),...[Show more]

CollectionsANU Research Publications
Date published: 2013-07-17
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.4816062


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