Inhomogeneous Si-doping of gold-seeded InAs nanowires grown by molecular beam epitaxy
We have investigated in-situ Si doping of InAs nanowires grown by molecular beam epitaxy from gold seeds. The effectiveness of n-type doping is confirmed by electrical measurements showing an increase of the electron density with the Si flux. We also observe an increase of the electron density along the nanowires from the tip to the base, attributed to the dopant incorporation on the nanowire facets whereas no detectable incorporation occurs through the seed. Furthermore the Si...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Rolland_Inhomogeneous_Si-doping_of_2013.pdf||Published Version||901.9 kB||Adobe PDF|
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