Enhanced thermal stability and electrical behavior of Zn-doped Sb2Te films for phase change memory application
Zn-doped Sb₂Te films are proposed to present the feasibility for phase-change memory application. Zn atoms are found to significantly increase crystallization temperature of Zn x (Sb₂Te)1−x films and be almost linearly with the wide range of Zn-doping concentration from x = 0 to 29.67 at.%. Crystalline resistances are enhanced by Zn-doping, while keeping the large amorphous/crystalline resistance ratio almost constant at ∼10⁵. Especially, the Zn 26.07 (Sb₂Te)73.93 and Zn 29.67 (Sb₂Te)70.33...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Shen_Enhanced_thermal_stability_and_2013.pdf||Published Version||1.47 MB||Adobe PDF|
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