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Enhanced thermal stability and electrical behavior of Zn-doped Sb2Te films for phase change memory application

Shen, Xiang; Wang, Guoxiang; Wang, R. P.; Dai, Shixun; Wu, Liangcai; Chen, Yimin; Xu, Tiefeng; Nie, Qiuhua


Zn-doped Sb₂Te films are proposed to present the feasibility for phase-change memory application. Zn atoms are found to significantly increase crystallization temperature of Zn x (Sb₂Te)1−x films and be almost linearly with the wide range of Zn-doping concentration from x = 0 to 29.67 at.%. Crystalline resistances are enhanced by Zn-doping, while keeping the large amorphous/crystalline resistance ratio almost constant at ∼10⁵. Especially, the Zn 26.07 (Sb₂Te)73.93 and Zn 29.67 (Sb₂Te)70.33...[Show more]

CollectionsANU Research Publications
Date published: 2013-04-01
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.4799370


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