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Defect formation and thermal stability of H in high dose H implanted ZnO

Chan, K. S.; Vines, L.; Johansen, K. M.; Monakhov, E. V.; Ye, J. D.; Parkinson, P.; Jagadish, C.; Svensson, B. G.; Wong-Leung, Jennifer


We studied the structural properties, defect formation, and thermal stability of H in hydrothermally grown ZnO single crystals implanted with H- dose ranging from 2.5×10¹⁶ to 1×10¹⁷ cm⁻². H implantation is found to create deformed layers with a uniaxial strain of 0.5–2.4% along the c-axis in ZnO, for the low and high dose, respectively. About 0.2–0.4% of the original implanted H concentration can still be detected in the samples by secondary ion mass spectrometry after annealing at a...[Show more]

CollectionsANU Research Publications
Date published: 2013-08-29
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.4819216


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