Defect formation and thermal stability of H in high dose H implanted ZnO
We studied the structural properties, defect formation, and thermal stability of H in hydrothermally grown ZnO single crystals implanted with H- dose ranging from 2.5×10¹⁶ to 1×10¹⁷ cm⁻². H implantation is found to create deformed layers with a uniaxial strain of 0.5–2.4% along the c-axis in ZnO, for the low and high dose, respectively. About 0.2–0.4% of the original implanted H concentration can still be detected in the samples by secondary ion mass spectrometry after annealing at a...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Chan_Defect_formation_and_thermal_2013.pdf||Published Version||1.63 MB||Adobe PDF|
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