Imaging of the relative saturation current density and sheet resistance of laser doped regions via photoluminescence
We present an approach to characterize the relative saturation current density (J oe) and sheet resistance (RSH) of laser doped regions on silicon wafers based on rapid photoluminescence (PL) imaging. In the absence of surface passivation layers, the RSH of laser doped regions using a wide range of laser parameters is found to be inversely proportional to the PL intensity (I PL ). We explain the underlying mechanism for this correlation, which reveals that, in principle, I PL is inversely...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Yang_Imaging_of_the_relative_2013.pdf||1.31 MB||Adobe PDF|
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