Properties of al2o3 films deposited by atomic layer deposition for photovoltaic applications
With the gradual decrease in silicon solar cell thickness, the overall efficiency has become more limited by the surface passivation. It has been recognized that the current dominant p-type silicon solar substrates will be replaced by the n-type materials. This thesis focuses on the properties of ALD aluminium-oxide layers, which is a promising dielectric material for the high efficiency n-type solar cells. Firstly, the impact of laterally non-uniform carrier lifetime on the determination of...[Show more]
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