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Ferroelectric memristor based on Pt/BiFeO3/Nb-doped SrTiO3 heterostructure

Hu, Zhongqiang; Li, Qian; Li, Meiya; Wang, Qiangwen; Zhu, Yongdan; Liu, Xiaolian; Zhao, Xingzhong; Liu, Yun; Dong, Shuxiang

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We report a continuously tunable resistive switching behavior in Pt/BiFeO₃/Nb-doped SrTiO₃ heterostructure for ferroelectric memristor application. The resistance of this memristor can be tuned up to 5 × 10⁵% by applying voltage pulses at room temperature, which exhibits excellent retention and anti-fatigue characteristics. The observed memristive behavior is attributed to the modulation effect of the ferroelectric polarization reversal on the width of depletion region and the height of...[Show more]

dc.contributor.authorHu, Zhongqiang
dc.contributor.authorLi, Qian
dc.contributor.authorLi, Meiya
dc.contributor.authorWang, Qiangwen
dc.contributor.authorZhu, Yongdan
dc.contributor.authorLiu, Xiaolian
dc.contributor.authorZhao, Xingzhong
dc.contributor.authorLiu, Yun
dc.contributor.authorDong, Shuxiang
dc.date.accessioned2015-09-22T00:05:48Z
dc.date.available2015-09-22T00:05:48Z
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/1885/15615
dc.description.abstractWe report a continuously tunable resistive switching behavior in Pt/BiFeO₃/Nb-doped SrTiO₃ heterostructure for ferroelectric memristor application. The resistance of this memristor can be tuned up to 5 × 10⁵% by applying voltage pulses at room temperature, which exhibits excellent retention and anti-fatigue characteristics. The observed memristive behavior is attributed to the modulation effect of the ferroelectric polarization reversal on the width of depletion region and the height of potential barrier of the p-n junction formed at the BiFeO₃/Nb-doped SrTiO₃ interface.
dc.description.sponsorshipThis work was supported by the National Natural Science Foundation of China (Grant Nos. 11074193 and 51132001). Q.L. and Y.L. acknowledge the support of the Australian Research Council (ARC) in the form of ARC Discovery Grants.
dc.publisherAmerican Institute of Physics
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 22/09/15). Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.4795145
dc.sourceApplied Physics Letters
dc.subjectKeywords: Depletion region; Ferroelectric polarization; Memristive behavior; Modulation effects; Potential barriers; Resistive switching behaviors; Room temperature; Voltage pulse; Memristors; Passive filters; Resistors; Semiconductor junctions; Strontium titanates
dc.titleFerroelectric memristor based on Pt/BiFeO3/Nb-doped SrTiO3 heterostructure
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume102
dc.date.issued2013-03-11
local.identifier.absfor030206
local.identifier.ariespublicationf5625xPUB2807
local.publisher.urlhttps://www.aip.org/
local.type.statusPublished Version
local.contributor.affiliationHu, Zhongqiang, Wuhan University, China
local.contributor.affiliationLi, Qian, College of Physical and Mathematical Sciences, CPMS Research School of Chemistry, RSC General, The Australian National University
local.contributor.affiliationLi, Meiya, Wuhan University, China
local.contributor.affiliationWang, Qiangwen, Wuhan University, China
local.contributor.affiliationYongdan, Zhu, Wuhan University, China
local.contributor.affiliationLiu, Xiaolian, Wuhan University, China
local.contributor.affiliationZhao, Xingzhong, Wuhan University, China
local.contributor.affiliationLiu, Yun, College of Physical and Mathematical Sciences, CPMS Research School of Chemistry, RSC General, The Australian National University
local.contributor.affiliationDong, Shuxiang, Wuhan University, China
local.bibliographicCitation.issue10
local.bibliographicCitation.startpage102901
local.bibliographicCitation.lastpage6
local.identifier.doi10.1063/1.4795145
local.identifier.absseo970103
dc.date.updated2016-02-24T09:02:37Z
local.identifier.scopusID2-s2.0-84875123554
local.identifier.thomsonID000316501200056
CollectionsANU Research Publications

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