Ferroelectric memristor based on Pt/BiFeO3/Nb-doped SrTiO3 heterostructure
We report a continuously tunable resistive switching behavior in Pt/BiFeO₃/Nb-doped SrTiO₃ heterostructure for ferroelectric memristor application. The resistance of this memristor can be tuned up to 5 × 10⁵% by applying voltage pulses at room temperature, which exhibits excellent retention and anti-fatigue characteristics. The observed memristive behavior is attributed to the modulation effect of the ferroelectric polarization reversal on the width of depletion region and the height of...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Hu_Ferroelectric_memristor_based_2013.pdf||Published Version||1.59 MB||Adobe PDF|
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