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Ferroelectric memristor based on Pt/BiFeO3/Nb-doped SrTiO3 heterostructure

Hu, Zhongqiang; Li, Qian; Li, Meiya; Wang, Qiangwen; Zhu, Yongdan; Liu, Xiaolian; Zhao, Xingzhong; Liu, Yun; Dong, Shuxiang


We report a continuously tunable resistive switching behavior in Pt/BiFeO₃/Nb-doped SrTiO₃ heterostructure for ferroelectric memristor application. The resistance of this memristor can be tuned up to 5 × 10⁵% by applying voltage pulses at room temperature, which exhibits excellent retention and anti-fatigue characteristics. The observed memristive behavior is attributed to the modulation effect of the ferroelectric polarization reversal on the width of depletion region and the height of...[Show more]

CollectionsANU Research Publications
Date published: 2013-03-11
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.4795145


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