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Impact of dopant compensation on the electrical properties of silicon for solar cells applications

Rougieux, Fiacre Emile

Description

This thesis aims at understanding the mechanisms limiting the efficiency of compensated silicon solar cells (containing boron and phosphorus in the bulk). Such dopant compensation is common in solar grade materials, especially in silicon from the metallurgical route, and can potentially lead to a degradation of the materials electronic properties. We experimentally show that a thermal oxidation can create an n-type layer at the surface of compensated p-type silicon. This n-type layer is...[Show more]

CollectionsOpen Access Theses
Date published: 2012
Type: Thesis (PhD)
URI: http://hdl.handle.net/1885/156042
DOI: 10.25911/5d514fda7bd46

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