Darby, B. L.; Yates, B. R.; Martin-Bragado, I.; Gomez-Selles, J. L.; Elliman, R. G.; Jones, K. S.
The solid phase epitaxial growth process has been studied at 330 °C by transmission electron microscopy for Ge wafers polished at 10°–15° increments from the  to  orientations. The velocity showed a strong dependence on substrate orientation with the  direction displaying a velocity 16 times greater than the  direction. A lattice kinetic Monte Carlo model was used to simulate solid phase epitaxial growth (SPEG) rates at different orientations, and simulations compared well...[Show more]
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