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Substrate orientation dependence on the solid phase epitaxial growth rate of Ge

Darby, B. L.; Yates, B. R.; Martin-Bragado, I.; Gomez-Selles, J. L.; Elliman, R. G.; Jones, K. S.


The solid phase epitaxial growth process has been studied at 330 °C by transmission electron microscopy for Ge wafers polished at 10°–15° increments from the [001] to [011] orientations. The velocity showed a strong dependence on substrate orientation with the [001] direction displaying a velocity 16 times greater than the [111] direction. A lattice kinetic Monte Carlo model was used to simulate solid phase epitaxial growth (SPEG) rates at different orientations, and simulations compared well...[Show more]

CollectionsANU Research Publications
Date published: 2013-01-15
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.4776718


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