Substrate orientation dependence on the solid phase epitaxial growth rate of Ge
The solid phase epitaxial growth process has been studied at 330 °C by transmission electron microscopy for Ge wafers polished at 10°–15° increments from the  to  orientations. The velocity showed a strong dependence on substrate orientation with the  direction displaying a velocity 16 times greater than the  direction. A lattice kinetic Monte Carlo model was used to simulate solid phase epitaxial growth (SPEG) rates at different orientations, and simulations compared well...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Darby_Substrate_orientation_2013.pdf||Published Version||1.41 MB||Adobe PDF|
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