Direct observation of substitutional Ga after ion implantation in Ge by means of extended x-ray absorption fine structure
We present an experimental lattice location study of Ga atoms in Ge after ion implantation at elevated temperature (250°C). Using extended x-rayabsorption fine structure (EXAFS) experiments and a dedicated sample preparation method, we have studied the lattice location of Ga atoms in Ge with a concentration ranging from 0.5 at. % down to 0.005 at. %. At Ga concentrations ≤0.05 at.%, all Ga dopants are substitutional directly after ion implantation, without the need for post-implantation thermal...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Decoster_Direct_observation_of_2012.pdf||Published Version||650.77 kB||Adobe PDF|
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