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Direct observation of substitutional Ga after ion implantation in Ge by means of extended x-ray absorption fine structure

Decoster, S.; Johannessen, B.; Glover, C. J.; Cottenier, S.; Bierschenk, T.; Salama, H.; Kremer, F.; Temst, K.; Vantomme, A.; Ridgway, M. C.

Description

We present an experimental lattice location study of Ga atoms in Ge after ion implantation at elevated temperature (250°C). Using extended x-rayabsorption fine structure (EXAFS) experiments and a dedicated sample preparation method, we have studied the lattice location of Ga atoms in Ge with a concentration ranging from 0.5 at. % down to 0.005 at. %. At Ga concentrations ≤0.05 at.%, all Ga dopants are substitutional directly after ion implantation, without the need for post-implantation thermal...[Show more]

CollectionsANU Research Publications
Date published: 2012-12-27
Type: Journal article
URI: http://hdl.handle.net/1885/15593
Source: Applied Physics Letters
DOI: 10.1063/1.4773185

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