A high-energy electron scattering study of the electronic structure and elemental composition of O-implanted Ta films used for the fabrication of memristor devices
High-energy electron scattering is used to investigate Ta films implanted with 10 keV O ions. These films are of interest as they have been used for the fabrication of memristors. High-energy electron scattering is used with incoming electron energies ranging from 5 to 40 keV. The inelastic mean free path, and hence the probing depth, is at these energies of the same order as the range of the implanted ions. At the same time, we can distinguish the mass of the atom that scattered the...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Vos_A_high-energy_electron_2013.pdf||Published Version||1.31 MB||Adobe PDF|
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