Vos, Maarten; Grande, Pedro L.; Nandi, Sanjoy K.; Venkatachalam, Dinesh K.; Elliman, Robert G.
High-energy electron scattering is used to investigate Ta films implanted with 10 keV O ions. These
films are of interest as they have been used for the fabrication of memristors. High-energy electron
scattering is used with incoming electron energies ranging from 5 to 40 keV. The inelastic mean free
path, and hence the probing depth, is at these energies of the same order as the range of the implanted
ions. At the same time, we can distinguish the mass of the atom that scattered the...[Show more]
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