Temperature dependence of Auger recombination in highly injected crystalline silicon

Abstract

The Auger lifetime in crystalline silicon has been measured under high injection conditions using an injection- and temperature-dependent photoconductance apparatus, across a temperature range from 243 to 473 K (−30 to 200 °C). The corresponding ambipolar Auger coefficient was found to have a value of 1.6 × 10⁻³⁰ cm⁶/s at 303 K (30 °C) at an injection level of 5 × 10¹⁶ cm¯³. The Auger coefficient was found to decrease between 243 K and 303 K, and then remain approximately constant up to 473 K. An empirical parameterization of the measured ambipolar Auger coefficient is provided.