Temperature dependence of Auger recombination in highly injected crystalline silicon
The Auger lifetime in crystalline silicon has been measured under high injection conditions using an injection- and temperature-dependent photoconductance apparatus, across a temperature range from 243 to 473 K (−30 to 200 °C). The corresponding ambipolar Auger coefficient was found to have a value of 1.6 × 10⁻³⁰ cm⁶/s at 303 K (30 °C) at an injection level of 5 × 10¹⁶ cm¯³. The Auger coefficient was found to decrease between 243 K and 303 K, and then remain approximately constant up to 473 K....[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Wang_Temperature_dependence_of_2012.pdf||Published Version||684.62 kB||Adobe PDF|
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