Yang, Xinbo; Fujiwara, K.; Abrosimov, N. V.; Gotoh, R.; Nozawa, J.; Koizumi, H.; Kwasniewski, A.; Uda, S.
Crystal-melt interfacemorphological transformation of differently oriented SiGe crystals with different Ge concentrations was observed, and the effect of Ge concentration on critical growth velocity (V c) for the interfacemorphological transformation was investigated. A planar-to-faceted morphological transformation for the 〈110〉, 〈112〉, and 〈100〉 interfaces was observed. V c for planar-to-faceted transformation of the 〈110〉, 〈112〉, and 〈100〉 interfaces decreases nonlinearly with increasing Ge...[Show more]
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