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The critical growth velocity for planar-to-faceted interfaces transformation in SiGe crystals

Yang, Xinbo; Fujiwara, K.; Abrosimov, N. V.; Gotoh, R.; Nozawa, J.; Koizumi, H.; Kwasniewski, A.; Uda, S.

Description

Crystal-melt interfacemorphological transformation of differently oriented SiGe crystals with different Ge concentrations was observed, and the effect of Ge concentration on critical growth velocity (V c) for the interfacemorphological transformation was investigated. A planar-to-faceted morphological transformation for the 〈110〉, 〈112〉, and 〈100〉 interfaces was observed. V c for planar-to-faceted transformation of the 〈110〉, 〈112〉, and 〈100〉 interfaces decreases nonlinearly with increasing Ge...[Show more]

CollectionsANU Research Publications
Date published: 2012
Type: Journal article
URI: http://hdl.handle.net/1885/15584
Source: Applied Physics Letters
DOI: 10.1063/1.3698336

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