Ion implantation for silicon solar cells
Ion implantation is investigated as a method for forming the heavily doped regions of silicon solar cells. Research is conducted with the aim of implementing ion implantation into the fabrication process of the Australian National University's interdigitated back contact and Sliver solar cell designs. High temperature annealing of boron and phosphorus implanted silicon is investigated, with an emphasis on thermal oxidation. The effect of annealing ambient on B implanted Si is studied, with...[Show more]
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