Scanning spreading resistance microscopy of two-dimensional diffusion of boron implanted in free-standing silicon nanostructures
B implants of 1keV, 1×10¹⁵at.cm⁻² into 125-nm-wide, free-standing Si nanostructures have been characterized using scanning spreading resistancemicroscopy following a 0s, 1050°Canneal in N₂. A curved diffusion front has been observed. B in the center of the ridge diffuses further than at the sides. A similar effect has been observed in SUPREM-IV simulations. It is attributed to a reduction in transient enhanced diffusion close to the vertical surfaces due to recombination of...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Vacuum Science & Technology B|
|01_Kluth_Scanning_spreading_resistance_2004.pdf||Published Version||409.23 kB||Adobe PDF|
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