Skip navigation
Skip navigation

Scanning spreading resistance microscopy of two-dimensional diffusion of boron implanted in free-standing silicon nanostructures

Kluth, S. M.; Álvarez, D.; Trellenkamp, St.; Moers, J.; Mantl, S.; Kretz, J.; Vandervorst, W.

Description

B implants of 1keV, 1×10¹⁵at.cm⁻² into 125-nm-wide, free-standing Si nanostructures have been characterized using scanning spreading resistancemicroscopy following a 0s, 1050°Canneal in N₂. A curved diffusion front has been observed. B in the center of the ridge diffuses further than at the sides. A similar effect has been observed in SUPREM-IV simulations. It is attributed to a reduction in transient enhanced diffusion close to the vertical surfaces due to recombination of...[Show more]

CollectionsANU Research Publications
Date published: 2004-12-28
Type: Journal article
URI: http://hdl.handle.net/1885/15577
Source: Journal of Vacuum Science & Technology B
DOI: 10.1116/1.1839898

Download

File Description SizeFormat Image
01_Kluth_Scanning_spreading_resistance_2004.pdfPublished Version409.23 kBAdobe PDFThumbnail


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  23 August 2018/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator