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Electronic properties of iron-boron pairs in crystalline silicon by temperature- and injection-level-dependent lifetime measurements

Birkholz, Jens E.; Bothe, Karsten; Macdonald, Daniel; Schmidt, Jan


Iron-boron pairs in crystalline silicon are studied by measuring the recombination lifetime as a function of injection density, doping concentration, and temperature. The characteristic crossover point of the injection-level-dependent carrier lifetime curves measured before and after optical dissociation of the iron-boron pairs is analyzed to determine the energy level as well as the electron- and hole-capture cross sections of the acceptor level of iron-boron pairs, assuming known...[Show more]

CollectionsANU Research Publications
Date published: 2005
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.1897489


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