Electronic properties of iron-boron pairs in crystalline silicon by temperature- and injection-level-dependent lifetime measurements
Iron-boron pairs in crystalline silicon are studied by measuring the recombination lifetime as a function of injection density, doping concentration, and temperature. The characteristic crossover point of the injection-level-dependent carrier lifetime curves measured before and after optical dissociation of the iron-boron pairs is analyzed to determine the energy level as well as the electron- and hole-capture cross sections of the acceptor level of iron-boron pairs, assuming known...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Birkholz_Electronic_properties_of_2005.pdf||Published Version||108.15 kB||Adobe PDF|
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