Intermixing of InGaAs/GaAs quantum wells and quantum dots using sputter-deposited silicon oxynitride capping layers
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McKerracher, Ian; Fu, Lan; Hoe Tan, Hark; Jagadish, Chennupati
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Various approaches can be used to selectively control the amount of intermixing in III-Vquantum well and quantum dotstructures. Impurity-free vacancy disordering is one technique that is favored for its simplicity, however this mechanism is sensitive to many experimental parameters. In this study, a series of silicon oxynitride capping layers have been used in the intermixing of InGaAs/GaAs quantum well and quantum dotstructures. These thin films were deposited by sputter deposition in order to...[Show more]
dc.contributor.author | McKerracher, Ian | |
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dc.contributor.author | Fu, Lan | |
dc.contributor.author | Hoe Tan, Hark | |
dc.contributor.author | Jagadish, Chennupati | |
dc.date.accessioned | 2015-09-18T05:12:20Z | |
dc.date.available | 2015-09-18T05:12:20Z | |
dc.identifier.issn | 0021-8979 | |
dc.identifier.uri | http://hdl.handle.net/1885/15573 | |
dc.description.abstract | Various approaches can be used to selectively control the amount of intermixing in III-Vquantum well and quantum dotstructures. Impurity-free vacancy disordering is one technique that is favored for its simplicity, however this mechanism is sensitive to many experimental parameters. In this study, a series of silicon oxynitride capping layers have been used in the intermixing of InGaAs/GaAs quantum well and quantum dotstructures. These thin films were deposited by sputter deposition in order to minimize the incorporation of hydrogen, which has been reported to influence impurity-free vacancy disordering. The degree of intermixing was probed by photoluminescence spectroscopy and this is discussed with respect to the properties of the SiOxNyfilms. This work was also designed to monitor any additional intermixing that might be attributed to the sputtering process. In addition, the high-temperature stress is known to affect the group-III vacancy concentration, which is central to the intermixing process. This stress was directly measured and the experimental values are compared with an elastic-deformation model. | |
dc.description.sponsorship | This work has been made possible with access to the ACT Node of the Australian National Fabrication Facility and through the financial support of the Australian Research Council. | |
dc.format | 11 pages | |
dc.publisher | American Institute of Physics (AIP) | |
dc.rights | http://www.sherpa.ac.uk/romeo/issn/0021-8979..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 18/09/15). Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at https://dx.doi.org/10.1063/1.4768283 | |
dc.source | Journal of Applied Physics | |
dc.subject | Keywords: Capping layer; Degree of intermixing; Experimental parameters; Experimental values; High temperature stress; Impurity free vacancy disordering; InGaAs/GaAs; Intermixing process; Quantum dot structure; Silicon oxynitrides; Sputtering process; Vacancy conce | |
dc.title | Intermixing of InGaAs/GaAs quantum wells and quantum dots using sputter-deposited silicon oxynitride capping layers | |
dc.type | Journal article | |
local.description.notes | Imported from ARIES | |
local.identifier.citationvolume | 112 | |
dcterms.dateAccepted | 2012-11-06 | |
dc.date.issued | 2012-12-06 | |
local.identifier.absfor | 020504 | |
local.identifier.absfor | 090605 | |
local.identifier.ariespublication | f5625xPUB2050 | |
local.publisher.url | https://www.aip.org/ | |
local.type.status | Published Version | |
local.contributor.affiliation | McKerracher, Ian, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University | |
local.contributor.affiliation | Fu, Lan, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University | |
local.contributor.affiliation | Tan, Hoe Hark, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University | |
local.contributor.affiliation | Jagadish, Chennupati, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University | |
local.bibliographicCitation.issue | 11 | |
local.bibliographicCitation.startpage | 113511 | |
local.bibliographicCitation.lastpage | 11 | |
local.identifier.doi | 10.1063/1.4768283 | |
local.identifier.absseo | 970102 | |
dc.date.updated | 2016-02-24T08:53:30Z | |
local.identifier.scopusID | 2-s2.0-84871249965 | |
local.identifier.thomsonID | 000312490700029 | |
Collections | ANU Research Publications |
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