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Recombination activity of interstitial iron and other transition metal point defects in p- and n-type crystalline silicon

Macdonald, Daniel; Geerligs, L. J.


Interstitial iron in crystalline silicon has a much larger capture cross section for electrons than holes. According to the Shockley–Read–Hall model, the low-injection carrier lifetime in p-type silicon should therefore be much lower that in n-type silicon, while in high injection they should be equal. In this work we confirm this modeling using purposely iron-contaminated samples. A survey of other transition metal impurities in silicon reveals that those which tend to occupy interstitial...[Show more]

CollectionsANU Research Publications
Date published: 2004-09-01
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.1812833


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