Recombination activity of interstitial iron and other transition metal point defects in p- and n-type crystalline silicon
Interstitial iron in crystalline silicon has a much larger capture cross section for electrons than holes. According to the Shockley–Read–Hall model, the low-injection carrier lifetime in p-type silicon should therefore be much lower that in n-type silicon, while in high injection they should be equal. In this work we confirm this modeling using purposely iron-contaminated samples. A survey of other transition metal impurities in silicon reveals that those which tend to occupy interstitial...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Macdonald_Recombination_activity_of_2004.pdf||416.2 kB||Adobe PDF|
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