Engineering the composition, morphology, and optical properties of InAsSb nanostructures via graded growth technique
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Lei, W.; Jagadish, C.; Tan, Hark Hoe
Description
Graded growth technique is utilized to realize the control over the composition, morphology, and optical properties of self-assembled InAsSb/InGaAs/InP nanostructures. By increasing the initial mole fraction of the Sb precursor during the graded growth of InAsSb, more Sb atoms can be incorporated into the InAsSb nanostructures despite the same Sb mole fraction averaged over the graded growth. This leads to a shape change from dots to dashes/wires for the InAsSb nanostructures. As a result of...[Show more]
dc.contributor.author | Lei, W. | |
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dc.contributor.author | Jagadish, C. | |
dc.contributor.author | Tan, Hark Hoe | |
dc.date.accessioned | 2015-09-18T04:45:11Z | |
dc.date.available | 2015-09-18T04:45:11Z | |
dc.identifier.issn | 0003-6951 | |
dc.identifier.uri | http://hdl.handle.net/1885/15569 | |
dc.description.abstract | Graded growth technique is utilized to realize the control over the composition, morphology, and optical properties of self-assembled InAsSb/InGaAs/InP nanostructures. By increasing the initial mole fraction of the Sb precursor during the graded growth of InAsSb, more Sb atoms can be incorporated into the InAsSb nanostructures despite the same Sb mole fraction averaged over the graded growth. This leads to a shape change from dots to dashes/wires for the InAsSb nanostructures. As a result of the composition and morphology change, photoluminescence from the InAsSb nanostructures shows different polarization and temperature characteristics. This work demonstrates a technologically important technique—graded growth, to control the growth and the resultant physical properties of self-assembled semiconductor nanostructures. | |
dc.description.sponsorship | Financial support from Australian Research Council is gratefully acknowledged. | |
dc.format | 5 pages | |
dc.publisher | American Institute of Physics | |
dc.rights | http://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 18/09/15). Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://dx.doi.org/10.1063/1.4789513 | |
dc.source | Applied Physics Letters | |
dc.subject | Keywords: Growth techniques; Mole fraction; Morphology changes; Self-assembled; Semiconductor nanostructures; Shape change; Temperature characteristic; Indium antimonides; Morphology; Optical properties; Semiconductor growth; Nanostructures | |
dc.title | Engineering the composition, morphology, and optical properties of InAsSb nanostructures via graded growth technique | |
dc.type | Journal article | |
local.description.notes | Imported from ARIES | |
local.identifier.citationvolume | 102 | |
dcterms.dateAccepted | 2013-01-14 | |
dc.date.issued | 2013-01-25 | |
local.identifier.absfor | 020400 | |
local.identifier.absfor | 091200 | |
local.identifier.absfor | 100700 | |
local.identifier.ariespublication | f5625xPUB2386 | |
local.publisher.url | https://www.aip.org/ | |
local.type.status | Published Version | |
local.contributor.affiliation | Lei, Wen, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University | |
local.contributor.affiliation | Tan, Hoe Hark, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University | |
local.contributor.affiliation | Jagadish, Chennupati, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University | |
local.bibliographicCitation.issue | 3 | |
local.bibliographicCitation.startpage | 033111 | |
local.bibliographicCitation.lastpage | 4 | |
local.identifier.doi | 10.1063/1.4789513 | |
local.identifier.absseo | 970102 | |
dc.date.updated | 2016-02-24T08:57:25Z | |
local.identifier.scopusID | 2-s2.0-84872966850 | |
local.identifier.thomsonID | 000314032600075 | |
Collections | ANU Research Publications |
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